Helsinki Accelerator Laboratory is a part of Department of Physics, University of Helsinki. It specializes in experimental and computational materials physics.
The current research focus is on materials of importance for nanotechnology, micro- and optoelectronics, spintronics, fusion technology and particle detectors. Their properties are studied by applying various ion beam based techniques, positron annihilation spectrometry as well as by computational means.
Enhancement of vacancy diffusion by C and N interstitials in the equiatomic FeMnNiCoCr high entropy alloy Lu, E., Zhao, J., Makkonen, I., Mizohata, K., Li, Z., Hua, M., Djurabekova, F. & Tuomisto, F. [scald=221711:sdl_editor_representation]
Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration Almogbel, A. S., Zollner, C. J., Saifaddin, B. K., Iza, M., Wang, J., Yao, Y., Wang, M., Foronda, H., Prozheev, I., Tuomisto, F., Albadri, A., Nakamura, S., DenBaars, S. P. & Speck, J. S.
Insights into the primary radiation damage of silicon by a machine learning interatomic potential, A. Hamedani , J. Byggmästar , F. Djurabekova, G. Alahyarizadeh, R. Ghaderi , A. Minuchehr, K. Nordlund.